Samsung Electronics has launched the mass production and shipment of the world’s first high-bandwidth memory 4 (HBM4), moving to secure an early lead in the emerging HBM4 market.
Samsung Electronics announced on February 12 that it has commenced its mass production and shipment of HBM4. From the outset of HBM4 development, Samsung set performance targets exceeding the standards established by the Joint Electron Device Engineering Council (JEDEC). To achieve this, the company has incorporated its most advanced 1c DRAM (10nm-class 6th generation) technology, achieving stable yields and industry-leading performance directly from the start of mass production to avoid the the need for any subsequen redesign.
Hwang Sang-jun, Executive Vice President and Head of Memory Development at Samsung Electronics, explained, “Our HBM4 breaks new ground by implementing cutting-edge technologies like 1c DRAM and 4nm logic process, departing from the conventional use of proven processes. Through enhanced process competitiveness and design improvements, we’ve created ample room for performance expansion, allowing us to meet our customers’ escalating performance requirements promptly.”
